Programmable read only memory using stacked-gate cell erasable b

Details Programmable read only memory using stacked-gate cell erasable b Programmable read only memory using stacked-gate cell erasable b

1988-12-13

1992-08-04

Popek, Joseph A.

Static information storage and retrieval

Floating gate

Particular biasing

36518909, 36523006, G11C 1134

Patent

active

051365413

ABSTRACT:
An electrically erasable programmable nonvolatile memory device includes a plurality of memory cells. The memory device has architecture similar to or same as an UV-EPROM. Erasure operating is performed by applying negative voltage to a control gate so as to inject holes into the floating gate.

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