Programmable read only memory (PROM) having circular shaped emit

Details Programmable read only memory (PROM) having circular shaped emit Programmable read only memory (PROM) having circular shaped emit

1988-11-28

1991-05-07

Gossage, Glenn

Static information storage and retrieval

Read only systems

Fusible

365104, 3652256, 357 20, 357 68, G11C 1714, H01L 2906

Patent

active

050142437

ABSTRACT:
A semiconductor memory of a junction destruction type includes programmable read-only memory (PROM) elements arranged in the form of a matrix on a substrate, bit lines connected to emitter regions of the PROM elements, and word lines connected to collector regions of the PROM elements, wherein the emitter regions of the PROM elements have a circular shape. Emitter regions have an opposite type of conductivity to that of the substrate. The bit lines are commonly connected to the emitter regions formed in the collector regions, respectively, to thereby increase density of the memory device.

REFERENCES:
patent: 4109169 (1978-08-01), Tantraporn et al.
patent: 4417265 (1983-11-01), Murkland
patent: 4659979 (1987-04-01), Burnham et al.
patent: 4792833 (1988-12-01), Fukushima
patent: 4835590 (1989-05-01), Ueno et al.

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