Programmable read-only memory formed with opposing PN diodes

Details Programmable read-only memory formed with opposing PN diodes Programmable read-only memory formed with opposing PN diodes

1985-08-05

1988-02-23

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

365 96, 365103, 365105, H01L 2904

Patent

active

047274093

ABSTRACT:
A semiconductor PROM contains a group of PROM cells (12) each consisting of a pair of opposing diodes oriented vertically with their common intermediate region (22 and 24) fully adjoining a recessed oxide insulating region (16). The PN junction (30) of the upper diode of each pair lies in non-monocrystalline semiconductor material. A composite buried layer consisting of buried regions (32) which adjoin the insulating region below the lower cell regions (20) and a buried web (44) which laterally surrounds each buried region is employed to improve programming efficiency as well as provide intermediate electrical connections.

REFERENCES:
patent: 3992232 (1976-11-01), Kaji et al.
patent: 4099260 (1978-07-01), Lynes et al.
patent: 4198649 (1980-04-01), Berry
patent: 4229757 (1980-10-01), Moussie
patent: 4403399 (1983-09-01), Taylor
patent: 4418468 (1983-12-01), Vora et al.
patent: 4480318 (1984-10-01), Chong
patent: 4624046 (1986-11-01), Shideler
IBM Tech. Disclosure Bulletin, vol. 23, #12, pp. 5388-5389, May 1981, by Jambotkas.
Electronics, Feb. 28, 1982, "16K-PROM Uses Vertical Fuses", p. 184.
M. Grossman, "Recessed-Oxide Isolation Hikes IBM's LSI Density and Speed", Electronic Design, Jun. 7, 1979, pp. 26-28.

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