Programmable read-only-memory element with polycrystalline silic

Details Programmable read-only-memory element with polycrystalline silic Programmable read-only-memory element with polycrystalline silic

1983-03-18

1987-09-08

Munson, Gene M.

357 50, 357 86, H01L 2904, H01L 2704

Patent

active

046927875

ABSTRACT:
A programmable read-only-memory (PROM) element is disclosed in which an N-type epitaxial layer, grown on a P-type substrate with an N+ buried layer therebetween, has a P-type anode region formed in a surface portion thereof. An N-type poly-silicon layer is formed on the surface of the anode region, generally within an aperture in an insulating layer, with the dopant of the poly-silicon layer being diffused downwardly into the anode region to form a shallow N-type cathode region. A metal layer is deposited on the surface of the poly-silicon layer over the anode region, and a low resistivity path is provided to the buried layer. To program the memory element, a positive potential is applied to the metal layer relative to the buried layer to break down the barrier between the cathode and anode regions. As the reverse current flow heats the poly-silicon, the metal alloys through the poly-silicon and the cathode region, and shorts to the anode region.

REFERENCES:
patent: 3742592 (1973-07-01), Rizzi et al.
patent: 4312046 (1982-01-01), Taylor
Electronic Design (Jul. 5, 1979), p. 31.

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