Programmable read-only memory device

Details Programmable read-only memory device Programmable read-only memory device

1980-04-07

1983-03-15

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

365174, G11C 1140

Patent

active

043769845

ABSTRACT:
A PROM (programmable read-only memory) device includes both PROM cells and peripheral circuits cooperating therewith with the PROM cells and peripheral circuits formed in and on the same bulk. The bulk is formed free of metal which acts as a life time killer. Further, in each of the PROM cells, a buffer layer made of a silicon semiconductor, is introduced between a metal electrode, acting as a bit line, and the surface of the bulk at the position where the PROM cell is formed. Furthermore, the peripheral circuits are made by using Schottky TTL (transistor transistor logic) circuits.

REFERENCES:
patent: 4064493 (1977-12-01), Davis
patent: 4180826 (1979-12-01), Shappir
patent: 4207585 (1980-06-01), Rao

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