Programmable read only memory cell having an electrically destru

Static information storage and retrieval – Magnetic bubbles – Guide structure

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357 4, 357 45, 365 96, 365105, H01L 2904, H01L 2710, H01L 4500, G11C 1706

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044941358

ABSTRACT:
A programmable read-only memory includes a number of programmable memory cells, each of which is formed in a thin layer of semiconductor material which extends on an insulating layer of a semiconductor body. Each programmable memory cell includes a p-n junction diode and an electrically destructible programmation element which are integrally formed in the thin layer of semiconductor material. The programmation element includes a necked-down portion of the thin layer, and this element may also have a p-n junction. The resulting structure yields a memory cell which is simple, highly compact, and which can be easily and reliably manufactured by known methods.

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patent: 4229757 (1980-10-01), Moussie

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