Programmable read only memory

Static information storage and retrieval – Read only systems – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365 96, G11C 1706

Patent

active

043853684

ABSTRACT:
A programmable read-only memory (PROM) circuit is provided wherein each one of a plurality of fusible links is coupled between a different row and column conductor of a matrix of row and column conductors and wherein each one of the row conductors is coupled to a corresponding one of a plurality of row driver circuits, each one having an output transistor connected to the corresponding one of the row conductors. Switch means are provided for feeding a first level of base current to the output transistors during the programming mode and for feeding a second, lower level of base current to such output transistors during the read mode.

REFERENCES:
patent: 4130889 (1978-12-01), Chua

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Programmable read only memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable read only memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable read only memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2148625

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.