Programmable read only memory

Details Programmable read only memory Programmable read only memory

1983-09-23

1984-11-06

O'Keefe, Veronica

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428627, 156653, B05D 512

Patent

active

044812639

ABSTRACT:
A programmable memory element for a programmable read only memory. The programmable memory element includes a Nichrome fusible link with a first metallization layer formed in contact with the Nichrome fusible link. An insulating layer is formed over the first metallization layer and over a portion of the Nichrome. The insulating layer is formed by first chemically vapor depositing a relatively thin layer of silicon dioxide at atmospheric pressure and then chemically vapor depositing a thicker layer of silicon nitride over the thin silicon dioxide layer, such silicon nitride layer being chemically vapor deposited in a vacuum.

REFERENCES:
patent: 3562040 (1971-02-01), Garies
patent: 3838442 (1974-09-01), Humphreys
patent: 3904454 (1975-09-01), Magdo et al.
patent: 4182781 (1980-01-01), Hooper et al.
V. A. Dhaka et al., IBM Tech. Disclosure Bulletin, vol. II, No. 7, Dec. 1968 (Masking Technique).

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