Programmable read-only memory

Details Programmable read-only memory Programmable read-only memory

1983-03-30

1983-12-13

Richardson, Robert L.

Static information storage and retrieval

Read only systems

Semiconductive

365175, G11C 1136

Patent

active

044208200

ABSTRACT:
A semiconductor memory cell for a programmable read-only memory includes a polysilicon layer formed with laterally spaced surface regions which differ in impurity concentration and which form two back-to-back series diodes functioning as a programmable diode and an isolating diode. Because of the different impurity concentration, the diodes have different reverse-bias breakdown voltages. The programmable diode has the lower reverse-bias breakdown voltage. The high reverse-bias breakdown voltage of the isolating diode has the effect of blocking the parasitic current drain on the programming current.

REFERENCES:
patent: 3641516 (1972-02-01), Castrucci et al.
patent: 3733690 (1973-05-01), Rizzi et al.
patent: 3742592 (1973-07-01), Rizzi et al.
patent: 3848238 (1974-11-01), Rizzi et al.
patent: 4208727 (1980-06-01), Redwine et al.

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