Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-06-07
1996-10-22
Nelms, David C.
Static information storage and retrieval
Floating gate
Particular biasing
36518518, 365226, G11C 1134
Patent
active
055684246
ABSTRACT:
An flash EEPROM system functioning as a mass storage medium for a host computer includes a controller and at least one flash EEPROM memory module. The flash EEPROM memory module includes at least one flash EEPROM chip having an on-chip programmable power generation circuit including a high voltage generator circuit capable of generating a high voltage Vpp from a logic level voltage Vdd provided to the chip, a serial protocol logic circuit, a data latch, a data bus, a register address decoder, and a multi-voltage generator/regulator. The multi-voltage generator/regulator includes a plurality of registers and provides the programming, reading, and erasing voltages required for proper operation of the flash EEPROM system from digital values stored in the plurality of registers by the controller. The high voltage generator circuit includes both high current and low current charge pump circuits for generating the high voltage Vpp. The high current charge pump circuit is connected to relatively large off-chip charge storage devices, and the low current charge pump circuit is connected to relatively small on-chip charge storage devices. The controller may activate one or the other of the high or low current charge pump circuits through control signals connected to enabling circuitry respectively connected to the high and low current charge pump circuits. Alternatively, the controller may deactivate both the high and low current charge pump circuits and cause the high voltage Vpp to be provided from other circuitry on another flash EEPROM chip in the flash EEPROM module.
REFERENCES:
patent: 4970692 (1990-05-01), Ali et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5267218 (1993-07-01), Elbert
patent: 5418752 (1993-12-01), Harari et al.
patent: 5426391 (1995-03-01), Tedrow et al.
patent: 5430859 (1995-10-01), Norman et al.
Cernea Raul-Adrian
Lee Douglas J.
Mehrotra Sanjay
Mofidi Mehrdad
Hoang Huan
Nelms David C.
SanDisk Corporation
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