Programmable polysilicon gate array base cell architecture

Details Programmable polysilicon gate array base cell architecture Programmable polysilicon gate array base cell architecture

1997-02-14

1999-06-29

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257203, 257202, 257391, 257208, H01L 2182, H01L 2704, H01L 2710

Patent

active

059172070

ABSTRACT:
A gate array is disclosed having a programmable polysilicon layer which serves as both the gate electrodes for MOS transistors and routing lines for some connections between gate electrodes. The gate array structure is formed on a semiconductor substrate and has an array of identical base cells located in a core region of the structure. Each such base cell des the following elements: (1) a plurality of transistors, each of which includes a gate electrode; and (2) one or more gate connection strips formed on the substrate and electrically connecting selected gate electrodes of two or more of the transistors. Preferably, the gate connection strips are made from the same material as the selected gate electrodes (e.g., polysilicon) and are integrally connected therewith. The gate connection strips may patterned (i.e., programmed) to form substrate level routing between gates of various transistors.

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