Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-09-29
2008-12-16
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S005000, C365S148000
Reexamination Certificate
active
07465952
ABSTRACT:
A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable between different states, wherein the first number is larger than two and the second number is larger than the first number divided by two. The electrically conducting channels may be provided in transition metal oxide material, which exhibits a reversibly switchable resistance that is attributed to a switching phenomenon at the interfaces between the electrodes and the transition metal oxide material.
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Baikalov et al., “Field-Driven Hysteretic and Reversible Resistive Switch at the AG-PRO.7CAO.3MNO3 Interface”, Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
Tsui et al., “Field-Induced Resistive Switching in Metal-Oxide Interfaces”, Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 85, No. 2, Hul. 12, 2004, pp. 317-319.
Alvarado Santos F.
Bednorz Johannes Georg
Meijer Gerhard Ingmar
Augspurger Lynn L.
Bernstein Allison P
Elms Richard
International Business Machines - Corporation
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