Programmable metallization cell structures including an...

Details Programmable metallization cell structures including an... Programmable metallization cell structures including an...

2008-05-13

2008-05-13

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE31026, C438S095000

Reexamination Certificate

active

11760556

ABSTRACT:
A microelectronic programmable structure suitable for storing information, a device including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.

REFERENCES:
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 6418049 (2002-07-01), Kozicki et al.

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