Programmable memory matrix employing voltage-variable resistors

Details Programmable memory matrix employing voltage-variable resistors Programmable memory matrix employing voltage-variable resistors

1989-01-10

1991-12-03

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 45, 357 2, 365105, H01L 2702, H01L 2710, H01L 4500, G11C 1706

Patent

active

050703838

ABSTRACT:
A memory matrix comprises a plurality of word lines, a plurality of bit lines, and a stacked diode and voltage-variable resistor structure interconnecting bit lines to word lines. The stacked diode and voltage-variable resistor structure includes a doped region in a semiconductor substrate defining a work line, a doped polycrystalline silicon layer over said word line and forming a p-n junction therewith, and an amorphized region in the doped polycrystalline silicon layer having increased resistance over the non-amorphized portion of the doped polycrystalline silicon layer. A contact is made to the amorphized polycrystalline silicon material which preferably includes a titanium-tungsten barrier layer and an aluminum layer over the barrier layer. To improve the breakdown voltage of the diode structure, a region of opposite conductivity type is formed in the word line under the doped polycrystalline silicon layer either by out-diffusion of dopants from the polycrystalline silicon layer or by the implantation of dopant ions through the polycrystalline silicon layer into the word line.

REFERENCES:
patent: 4210996 (1980-07-01), Amemiya et al.
patent: 4238694 (1980-12-01), Kimerling et al.
patent: 4432008 (1984-02-01), Maltiel
patent: 4442507 (1984-04-01), Roesner
patent: 4569120 (1986-02-01), Stacey et al.

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