Programmable memory cell having semiconductor diodes

Details Programmable memory cell having semiconductor diodes Programmable memory cell having semiconductor diodes

1978-08-31

1980-10-21

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 4, 357 45, 365 96, 365105, H01L 2710, G11C 1706, H01L 2904

Patent

active

042297575

ABSTRACT:
Integrated electrically programmable read only memory cell having at least two back-to-back diodes.
A first diode is formed by a planar junction (7) between two superimposed regions (2, 6), the second diode is programmable and is formed by a lateral junction (11) between two coplanar zones (9, 10) of a thin semi-conductor layer isolated from the body by an insulating layer (8) having a contact aperture (18).

REFERENCES:
patent: 3377513 (1968-04-01), Ashby
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 3641516 (1972-02-01), Castrucci
patent: 3781825 (1973-12-01), Buirker et al.
patent: 4145702 (1979-03-01), Rau
patent: 4146902 (1979-03-01), Tanimoto et al.

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