Programmable low impedance anti-fuse element

Details Programmable low impedance anti-fuse element Programmable low impedance anti-fuse element

1988-03-10

1990-07-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 59, 437170, 437193, 437922, H01L 2122, H01L 21465

Patent

active

049435388

ABSTRACT:
An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive electrode which may be formed of a metal or semiconductor material, an insulating layer, which, in a preferred embodiment includes a first layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide. An upper electrode formed of a metal or of a semiconductor material of the same conductivity type of the lower electrode or a sandwich of both completes the structure.

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Baitinger "Manufacturing High-Frequency Diodes", IBM TDB, vol. 13, No. 13, Mar. 1971, 3159.

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