Programmable interconnect structures and programmable integrated

Details Programmable interconnect structures and programmable integrated Programmable interconnect structures and programmable integrated

1992-04-23

1993-03-23

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257751, 257764, H01L 2702, H01L 2934, H01L 2348, H01L 2946

Patent

active

051967243

ABSTRACT:
An amorphous silicon antifuse has a bottom electrode, a dielectric overlying the bottom electrode, amorphous silicon contacting the bottom electrode in a via in the dielectric, and the top electrode over the amorphous silicon. Spacers are provided in the via corners between the amorphous silicon and the top electrode. The spacers smooth the surface above the amorphous silicon, provide good top electrode step coverage, and reduce leakage current. Another amorphous silicon antifuse is provided in which the amorphous silicon layer is planar. The planarity makes the amorphous silicon layer easy to manufacture. A programmable CMOS circuit is provided in which the antifuse are formed over the intermetal dielectric. The antifuse are not affected by the high temperatures associated with the formation of the intermetal dielectric and the first-metal contacts. The intermetal dielectric protects the circuit elements during the antifuse formation. The bottom electrodes of the antifuses are connected to the first-metal contacts. The overall capacitance associated with the antifuses is low, and hence the circuit is fast.

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