Programmable interconnect structures and programmable integrated

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257 50, 437922, H01L 2900

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active

055571360

ABSTRACT:
Antifuses and gate arrays with antifuses are disclosed that have high thermal stability, reduced size, reduced leakage current, reduced capacitance in the unprogrammed state, improved manufacturing yield, and more controllable electrical characteristics. Some antifuses include spacers in the antifuse via. In some antifuses, the programmable material is planar, and the top or the bottom electrode is formed in the antifuse via. In some gate arrays, the antifuses are formed above the dielectric separating two levels of routing channels rather than below that dielectric.

REFERENCES:
patent: 3675090 (1972-07-01), Neale
patent: 3792319 (1974-02-01), Tsang
patent: 4424578 (1984-01-01), Miyamoto
patent: 4458297 (1984-07-01), Stopper et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4519849 (1985-05-01), Korsh et al.
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4590589 (1986-05-01), Gerzberg
patent: 4641420 (1987-02-01), Lee
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4751197 (1988-06-01), Wills
patent: 4758745 (1988-07-01), Elgamal et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4847732 (1989-07-01), Stopper et al.
patent: 4857774 (1989-08-01), El-Ayat et al.
patent: 4862243 (1989-08-01), Welch et al.
patent: 4873459 (1989-10-01), El Gammal et al.
patent: 4882611 (1989-11-01), Blech et al.
patent: 4898841 (1990-02-01), Ho
patent: 4910417 (1990-03-01), El Gammal et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4922319 (1990-05-01), Fukushima
patent: 4933898 (1990-06-01), Gilberg et al.
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 4949084 (1990-08-01), Schwartz et al.
patent: 4962414 (1990-10-01), Liou et al.
patent: 5011791 (1991-04-01), Mastroianni
patent: 5066612 (1991-11-01), Ohba et al.
patent: 5100827 (1992-03-01), Lytle
patent: 5106773 (1992-04-01), Chen et al.
patent: 5120679 (1992-06-01), Boardman
patent: 5181096 (1993-01-01), Forouhi
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5308795 (1994-05-01), Hawley et al.
R. F. Broony et al. "Discretionary Interconnection Method for Integrated Circuits" IBM Technical Disclosure Bulletin vol. 14, No. 11 (Apr. 1972) pp. 3549-3550.
Brian Cook et al., "Amorphous Silicon Antifuse Technology for Bipolar PROMs", 1986 Bipolar Circuits and Technology Meeting, IEEE 1986, pp. 99-100.
R.V. Joshi et al., "Low-Resistance Submicron CVD W Interlevel Via Plugs on Al-Cu-Si", Jun. 12-13, 1989 VMIC Conference, IEEE 1989, pp. 113-121.
T. Ohba et al., "Selective and Blanket Tungsten Interconnection and its Suitability for 0.2-Micron ULSI", Jun. 12-13, 1990 VMIC Conference, IEEE 1990, pp. 226-232.
E. Hamdy et al., "Dielectric Based Antifuse for Logic and Memory ICs", IEDM 1988, pp. 786-789.
T. Moriya et al, "A Planar Metallization Process--Its Application to Tri-Level Aluminum Interconnection", 83 IEDM 550-553 (IEEE 1983).
J.M.F.G. van Laarhoven et al., "A Novel Blanket Tungsten Etchback Scheme", Jun. 12-13, 1989 VMIC Conference, IEEE 1989, pp. 129-135.

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