Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-09-06
2009-12-15
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S042000, C257SE21068, C438S102000
Reexamination Certificate
active
07633079
ABSTRACT:
A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.
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Chen Kuang-Neng
Elmegreen Bruce G.
Kim Deok-Kee
Kothandaraman Chandrasekharan
Krusin-Elbaum Lia
Alexanian Vazken
Cantor & Colburn LLP
Dang Trung
International Business Machines - Corporation
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