Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2005-07-05
2005-07-05
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S131000, C438S215000, C438S281000, C438S333000, C438S467000, C438S601000, C257S529000, C257S530000, C257S665000
Reexamination Certificate
active
06913954
ABSTRACT:
A fuse device including a transistor having a source, drain, and gate. The gate includes a first and second gate contact. A current may be run from the first gate contact to the second gate contact to heat the gate. The current through the gate indirectly heats the channel region beneath the gate, causing localized annealing of the channel region. The heated gate causes dopants to diffuse from the source and drain into the channel region, permanently changing the properties of the transistor material and programming the fuse device. The fuse device functions as a transistor in an unprogrammed state, and acts as a shunt in a programmed state, caused by the shorting of the source and drain of the transistor during programming.
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Ewald, L., et al., “Fusible Link Device,” IBM Technical Disclosure Bulletin, vol. 19, No. 8, Jan. 1977, pp. 3089-3090.
Huynh Andy
Infineon - Technologies AG
Slater & Matsil L.L.P.
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