Programmable element in barrier metal device

Details Programmable element in barrier metal device Programmable element in barrier metal device

1994-09-21

1997-07-15

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257486, 257530, 257751, 257767, 257768, 257926, H01L 2900

Patent

active

056486782

ABSTRACT:
An integrated circuit 10 has a programmable Zener diode with diffusion regions 18 and 16 and metal contacts 34 and 32. A barrier metal 30 is disposed between one contact 32 and the substrate 12; another contact region 18 has no barrier metal on its surface. A polysilicon layer 22 is self-aligned with surface regions 18 and diffusion region 18. A silicide layer 128 may be used on the polysilicon layer 22 and on surface region 18.

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patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272104 (1993-12-01), Schrantz et al.
patent: 5298784 (1994-03-01), Gambino et al.

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