Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2005-01-04
2005-01-04
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S130000, C438S259000
Reexamination Certificate
active
06838307
ABSTRACT:
In programmable conductor memory cells, metal ions precipitate out of a glass electrolyte element in response to an applied electric field in one direction only, causing a conductive pathway to grow from cathode to anode. The amount of conductive pathway growth, and therefore the programming, depends, in part, on the availability of metal ions. It is important that the metal ions come only from the solid solution of the memory cell body. If additional metal ions are supplied from other sources, such as the sidewall edge at the anode interface, the amount of metal ions may not be directly related to the strength of the electric field, and the programming will not respond consistently from cell to cell. The embodiments described herein provide new and novel structures that block interface diffusion paths for metal ions, leaving diffusion from the bulk glass electrolyte as the only supply of metal ions for conductive pathway formation.
REFERENCES:
patent: 3622319 (1971-11-01), Sharp
patent: 3743847 (1973-07-01), Boland
patent: 4269935 (1981-05-01), Masters et al.
patent: 4312938 (1982-01-01), Drexler et al.
patent: 4316946 (1982-02-01), Masters et al.
patent: 4320191 (1982-03-01), Yoshikawa et al.
patent: 4405710 (1983-09-01), Balasubramanyam et al.
patent: 4419421 (1983-12-01), Wichelhaus et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4671618 (1987-06-01), Wu et al.
patent: 4795657 (1989-01-01), Formigoni et al.
patent: 4800526 (1989-01-01), Lewis
patent: 4847674 (1989-07-01), Sliwa et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5238862 (1993-08-01), Blalock et al.
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 5314772 (1994-05-01), Kozicki
patent: 5315131 (1994-05-01), Kishimoto et al.
patent: 5350484 (1994-09-01), Gardner et al.
patent: 5360981 (1994-11-01), Owen et al.
patent: 5500532 (1996-03-01), Kozicki et al.
patent: 5512328 (1996-04-01), Yoshimura et al.
patent: 5512773 (1996-04-01), Wolf et al.
patent: 5726083 (1998-03-01), Takaishi
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolsteinholme et al.
patent: 5818749 (1998-10-01), Harshfield
patent: 5841150 (1998-11-01), Gonzalez et al.
patent: 5846889 (1998-12-01), Harbison et al.
patent: 5851882 (1998-12-01), Harshfield
patent: 5869843 (1999-02-01), Harshfield
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5998066 (1999-12-01), Block et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6117720 (2000-09-01), Harshfield
patent: 6143604 (2000-11-01), Chiang et al.
patent: 6177338 (2001-01-01), Liaw et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6297170 (2001-10-01), Gabriel et al.
patent: 6300684 (2001-10-01), Gonzalez et al.
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6329606 (2001-12-01), Freyman et al.
patent: 6337266 (2002-01-01), Zahorik
patent: 6348365 (2002-02-01), Moore et al.
patent: 6350679 (2002-02-01), McDaniel et al.
patent: 6376284 (2002-04-01), Gonzalez et al.
patent: 6388324 (2002-05-01), Kozickl et al.
patent: 6391688 (2002-05-01), Gonzalez et al.
patent: 6414376 (2002-07-01), Thakur et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423628 (2002-07-01), Li et al.
patent: 6440837 (2002-08-01), Harshfield
patent: 6469364 (2002-10-01), Kozicki
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 20020000666 (2002-01-01), Kozicki et al.
patent: 20020072188 (2002-06-01), Gilton
patent: 20020106849 (2002-08-01), Moore
patent: 20020123169 (2002-09-01), Moore et al.
patent: 20020123170 (2002-09-01), Moore et al.
patent: 20020123248 (2002-09-01), Moore et al.
patent: 20020127886 (2002-09-01), Moore et al.
patent: 20020132417 (2002-09-01), Li
patent: 20020160551 (2002-10-01), Harshfield
patent: 20020163828 (2002-11-01), Krieger et al.
patent: 20020168820 (2002-11-01), Kozicki et al.
patent: 20020168852 (2002-11-01), Harshfield et al.
patent: 20020190289 (2002-12-01), Harshfield et al.
patent: 20020190350 (2002-12-01), Kozicki et al.
patent: 20030001229 (2003-01-01), Moore et al.
patent: 20030027416 (2003-02-01), Moore
patent: 20030032254 (2003-02-01), Gilton
patent: 20030035314 (2003-02-01), Kozicki
patent: 20030035315 (2003-02-01), Kozicki
patent: 20030038301 (2003-02-01), Moore
patent: 20030043631 (2003-03-01), Gilton et al.
patent: 20030045049 (2003-03-01), Campbell et al.
patent: 20030045054 (2003-03-01), Campbell et al.
patent: 20030047765 (2003-03-01), Campbell
patent: 20030047772 (2003-03-01), Li
patent: 20030047773 (2003-03-01), Li
patent: 20030048519 (2003-03-01), Kozicki
patent: 20030049912 (2003-03-01), Campbell et al.
patent: 20030068861 (2003-04-01), Li
patent: 20030068862 (2003-04-01), Li
patent: 20030095426 (2003-05-01), Hush et al.
patent: 20030096497 (2003-05-01), Moore et al.
patent: 20030107105 (2003-06-01), Kozicki
patent: 20030117831 (2003-06-01), Hush
patent: 20030128612 (2003-07-01), Moore et al.
patent: 20030137869 (2003-07-01), Kozicki
patent: 20030143782 (2003-07-01), Gilton et al.
patent: 20030155589 (2003-08-01), Campbell et al.
patent: 20030155606 (2003-08-01), Campbell et al.
patent: 20030156447 (2003-08-01), Kozicki
patent: 20030156463 (2003-08-01), Casper et al.
patent: 20030209728 (2003-11-01), Kozicki et al.
patent: 20030209971 (2003-11-01), Kozicki et al.
patent: 20030210564 (2003-11-01), Kozicki et al.
patent: 56126916 (1981-10-01), None
patent: WO 9748032 (1997-12-01), None
patent: WO 9928194 (1999-06-01), None
patent: WO 00481996 (2000-08-01), None
patent: WO 0221542 (2002-03-01), None
Abdel-All, A.; Elshafie,A.; Elhawary, M.M., DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass, Vacuum 59 (2000) 845-853.
Adler, D.; Moss, S.C., Amorphous memories and bistable switches, J. Vac. Sci. Technol. 9 (1972) 1182-1189.
Adler, D.; Henisch, H.K.; Mott, S.N., The mechanism of threshold switching in amorphous alloys, Rev. Mod. Phys. 50 (1978) 209-220.
Afifi, M.A.; Labib, H.H.; El-Fazary, M.H.; Fadel , M., Electrical and thermal properties of chalcogenide glass system Se75Ge25-xSbx, Appl. Phys. A 55 (1992) 167-169.
Afifi,M.A.; Labib, H.H.; Fouad, S.S.; el-Shazly, A.A., Electrical & thermal conductivity of the amorphous semiconductor GexSe1-x, Egypt, J. Phys. 17 (1986) 335-342.
Alekperova, Sh.M.; Gadzhieva, G.S., Current-Voltage characteristics of Ag2Se single crystal near the phase transition, Inorganic Materials 23 (1987) 137-139.
Aleksiejunas, A.; Cesnys, A., Switching phenomenon and memory effect in thin-film heterojunction of polycrystalline selenium-silver selenide, Phys. Stat. Sol. (a) 19 (1973) K169-K171.
Angell, C.A., Mobile ions in amorphous solids, Annu. Rev. Phys. Chem. 43 (1992) 693-717.
Aniya, M., Average electronegatively, medium-range-order, and ionic conductivity in superionic glasses, Solid state Ionics 136-137 (2000) 1085-1089.
Asahara, Y.; Izumitani, T., Voltage controlled switching in Cu-As-Se compositions, J. Non-Cryst. Solids 11 (1972) 97-104.
Asokan, S.; Prasad, M.V.N.; Parthasarathy, G.; Gopal, E.S.R., Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Phys. Rev. Lett. 62 (1989) 808-810.
Axon Technologies Corporation, Technology Description:Programmable Metalization Cell(PMC), pp. 1-6 (Pre-May 2000).
Baranvcskii, S.D.; Cordes, H., On the conduction mechanism in Ionic glasses, J. Chem. Phys. 111 (1999) 7546-7557.
Belin, R.; Taillades, G.; Pradel, A.; Ribes, M., Ion dynamics in superionic chalcogenide glasses; complete conductivity spectra, Solid state Ionics 136-137 (2000) 1025-1029.
Belin, R.; Zerouale, A.; Pradel, A.; Ribes, M., Ion dynamics in the argyrodite compound Ag7GeSe5L: non-Arrhenius behavior and complete conductivity spectra, Solid State Ionics 143 (2001) 445-455.
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