Programmable antifuse structure, process, logic cell and archite

Details Programmable antifuse structure, process, logic cell and archite Programmable antifuse structure, process, logic cell and archite

1991-01-22

1992-11-24

Hudspeth, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072021, 307469, 437922, 257530, H03K 19177

Patent

active

051665565

ABSTRACT:
An integrated circuit of the present invention comprises antifuse elements which have been fabricated by depositing at under 500.degree. C. an antifuse layer approximately 30 nanometers to 400 nanometers between layers of titanium (Ti), said antifuse layer comprising a stoichiometric or off-stoichiometric amorphous silicon-based dielectric layer, such that a heating of the said antifuse layer in excess of 500.degree. C. by electrical or energy beam means will cause a chemical reduction reaction between the titanium and silicon-dioxide layers that yields more Ti.sub.5 Si.sub.3, TiSi, and/or TiSi.sub.2 than is yielded TiO, Ti.sub.2 O.sub.3, Ti.sub.3 O.sub.5, and/or TiO.sub.2, and such that there results a conductive compound between said titanium layers which constitutes a short circuit.

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