Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-08-25
1998-08-04
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, H01L 2900
Patent
active
057897964
ABSTRACT:
The present invention relates to a technology of an electrically programmable anti-fuse device. The anti-fuse device comprises a semiconductor substrate provided with a plurality of functional elements; a field oxide layer formed on said semiconductor substrate, for electrically isolating the functional elements from each other; a predetermined pattern of a first electrode formed on said field oxide layer; a first insulating layer having two contact holes isolated from each other only on said first electrode, deposited on said field oxide layer as well as both end portions and center portion of said first electrode; a second insulating layer formed in said contact holes, to serves as an interlayer; and a second electrode formed on said second insulating layer.
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Baek Jong-Tae
Kang Sang-Won
Carroll J.
Electronics and Telecommunications Research Institute
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