Programmable and erasable MOS memory device

Details Programmable and erasable MOS memory device Programmable and erasable MOS memory device

1990-10-29

1991-11-19

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

365185, H01L 2978

Patent

active

050669923

ABSTRACT:
An electrically programmable and electrically erasable MOS memory device having a floating gate which is separated from the semiconductor substrate by a thin oxide layer, the memory device also having an impurity implant in the substrate which extends under an edge of the floating gate beneath the thin oxide layer. In one embodiment the thin oxide layer underlies the entire floating gate while in another embodiment only a portion of a small thin side window extends under the floating gate's edge. Also disclosed is a fabrication process in which the one embodiment is formed by first forming the floating gate over the thin oxide layer and then implanting the impurity near an edge of the floating gate. Later steps with heating cause the implanted impurity to diffuse under the floating gate edge. An alternative process first forms a window in the gate oxide layer and implants the impurity through the window. The window is filled with a thin oxide layer and the floating gate is formed so that its edge lies over a portion of the window. Control gates, sources and drains are formed last.

REFERENCES:
patent: 4282540 (1981-08-01), Ning et al.
patent: 4608585 (1986-08-01), Keshtbod
patent: 4794333 (1988-12-01), Kamiya et al.
patent: 4794562 (1988-12-01), Kato et al.
patent: 4962481 (1990-10-01), Choi et al.

Affiliated with

Also associated with

Rating

Programmable and erasable MOS memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable and erasable MOS memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable and erasable MOS memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1373627