Programmable active/passive cell structure

Details Programmable active/passive cell structure Programmable active/passive cell structure

1987-11-19

1989-07-25

Hille, Rolf

357 34, 357 35, 357 51, 357 43, H01L 2704

Patent

active

048518930

ABSTRACT:
An improved cell structure which can be programmed to have resistors, an NPN transistor or a PNP lateral transistor in a linear arrangement with an open PNP structure. The PNP collector regions are made parallel to a PNP emitter, with lightly doped resistive P-regions attached to the ends of the emitter region to prevent the flow of current to the P-isolation boundary region. At least one base region is provided in line with a collector region and adjacent one of the resistive regions connected to the emitter.

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Berger et al, "Current Gain in Injection Transistor Structures," IBM Technical Disclosure Bulletin, vol. 17, No. 12, May 75, pp. 3613-3614.
Battista et al., "Lateral PNP Structure for Memory Cell," IBM Technical Disclosure Bulletin, vol. 18, No. 10, Mar. 1976, pp. 3254-3255.

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