Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-08-02
2011-08-02
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185170, C365S185030, C365S185240
Reexamination Certificate
active
07990771
ABSTRACT:
A method of erasing and programming a flash memory device including multi-level cells (MLCs). MLCs of a word line are selected and some of the MLCs are pre-programmed based on whether their individual threshold voltages are included in a first voltage range. The selected MLCs are pre-programmed with a pre-program (first) voltage; and the remaining MLCs are prohibited from pre-programming; then the remaining MLCs connected to the selected word line are programmed by applying a program (second) voltage that gradually rises from the pre-program voltage at a ratio of a step voltage n for the selected line.
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Hwang Kyung Pil
Joo Seok Jin
Kim Hyung Seok
Kim Ju In
Kim Sook Kyung
Hur J. H.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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