Program method and circuit of non-volatile memory

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S185080, C365S185050, C365S185280

Reexamination Certificate

active

07414888

ABSTRACT:
A circuit of non-volatile memory which includes a plurality of memory units is disclosed. The memory unit comprises a first switch, a second switch, a data line, a voltage storage component, and a plurality of memory components connected in series. The first terminal of the first switch is coupled to the first voltage. The data line is coupled to the second terminal of the first switch. The first terminal of the voltage storage component is coupled to the data line, and the second terminal of the voltage storage component is coupled to the ground. The first terminal of the second switch is coupled the data line. In addition, the third terminal of each memory component is coupled to the first terminal of the next memory component, and the second terminal of the each memory component is coupled to second voltage.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6567315 (2003-05-01), Takase et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 6781890 (2004-08-01), Tanaka et al.
patent: 2002/0024515 (2002-02-01), Booth et al.
patent: 2004/0032788 (2004-02-01), Sakui et al.
patent: 2004/0100826 (2004-05-01), Cho
patent: 2004/0119109 (2004-06-01), Kang
patent: 2006/0203598 (2006-09-01), Akaogi

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Program method and circuit of non-volatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Program method and circuit of non-volatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Program method and circuit of non-volatile memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4017642

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.