Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-11-07
2006-11-07
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185290
Reexamination Certificate
active
07133316
ABSTRACT:
A method of operating a memory device is disclosed, wherein the memory device includes an n-type substrate and a plurality of memory cells formed thereon, each memory cell corresponding to a word line, a first bit line, and second bit line, and including a first bit portion and a second bit portion each for storing one bit of information. The method includes resetting a selected memory cell by applying a first negative bias to the word line of the selected memory cell and applying a ground bias to the first and second bit lines, and programming the first bit portion of the selected memory cell by applying a first positive bias to the word line of the selected memory cell, applying a second negative bias to the first bit line of the selected memory cell, and applying a ground bias to the second bit line of the selected memory cell.
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Akin Gump Strauss Hauer & Feld & LLP
Auduong Gene N.
Macronix International Co. Ltd.
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