Program control circuit of flash memory device having MLC...

Details Program control circuit of flash memory device having MLC... Program control circuit of flash memory device having MLC...

2007-07-12

2008-08-19

Phung, Anh (Department: 2824)

Static information storage and retrieval

Magnetic bubbles

Disposition of elements

C365S185190

Reexamination Certificate

active

07414871

ABSTRACT:
A program control circuit and method thereof selectively controls a supply time of a word line bias voltage depending on the number of program cycles being in progress. Therefore, over-programming of MLCs can be prevented and an overall program time can be shortened.

REFERENCES:
patent: 6154390 (2000-11-01), Yang
patent: 6418053 (2002-07-01), Parker
patent: 6418054 (2002-07-01), Hollmer
patent: 6747894 (2004-06-01), Kawamura
patent: 7145809 (2006-12-01), Wu
patent: 7259976 (2007-08-01), Lee et al.
patent: 200402890 (2004-02-01), None
patent: 200428397 (2004-12-01), None

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