Program and program verify operations for flash memory

Details Program and program verify operations for flash memory Program and program verify operations for flash memory

2006-01-17

2008-03-11

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

Reexamination Certificate

active

07342830

ABSTRACT:
A method for programming a nonvolatile memory array including an array of memory cells, each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region, includes performing a program operation on a group of memory cells, where the group of memory cells includes a plurality of subgroups. A verify status value is stored for each subgroup, the verify status value indicating a verify status of each subgroup, wherein the verify status value indicates whether an associated subgroup has been program verified. A program verify operation is performed on a selected subgroup when the verify status value associated with the selected subgroup indicates that the selected verify subgroup has not been program verified.

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2002 IEEE International Solid-State Circuits Conference, 23 pages.

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