Program-and-erase method for multilevel nonvolatile memory

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185030, C365S185180

Reexamination Certificate

active

07746704

ABSTRACT:
A system includes an input that receives a control signal and a program module that initializes a nonvolatile multilevel memory cell based on the control signal. The program module initializes the nonvolatile multilevel memory cell by programming the nonvolatile multilevel memory cell to one of S states of the nonvolatile multilevel memory cell, where S is an integer greater than 1. The one of the S states is different than a lowest one of the S states.

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U.S. Appl. No. 11/169,399; “Method and Apparatus Transporting Charges in Semiconductor Device and Semiconductor Memory Device”; Chih-Hsin Wang; filed Jun. 28, 2005; 89 pages.

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