Program acceleration of a memory device

Details Program acceleration of a memory device Program acceleration of a memory device

2008-06-30

2010-06-01

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185190

Reexamination Certificate

active

07729176

ABSTRACT:
Selective program acceleration of a memory device is generally described. A method includes applying a first bias voltage to one or more bit lines coupled with a plurality of cells to be programmed, applying one or more program pulses to the plurality of cells, verifying the plurality of cells at a target threshold voltage to determine whether one or more cells of the plurality of cells have reached or surpassed the target threshold voltage, identifying slower cells of the plurality of cells, and selectively accelerating a program speed of the slower cells to reduce a programming time of a memory device.

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