Profile simulation method, dependent on curvature of processed s

Details Profile simulation method, dependent on curvature of processed s Profile simulation method, dependent on curvature of processed s

1996-07-25

1999-03-02

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430 5, 430331, G03F 900

Patent

active

058768858

ABSTRACT:
The profile simulation method of predicting a processed profile of a surface of a substrate to be changed by physically or chemically processing a film on the substrate to be processed comprises a step of changing a processing speed in correspondence with a convex portion and a recessed portion of the film on the substrate.

REFERENCES:
E. Barouch, et al. "Resist Development Described By Least Action Principle-Line Profile Prediction", J. Vac. Sci. Technol. B6, (pp. 2234-2237), Nov./Dec. 1988.
Masato Fujinaga, et al. "Three-Dimensional Topography Simulation Model: Etching and Lithography", IEEE Transactions on Electron Devices, vol. 37. No. 10, (pp. 2183-2192), Oct. 1990.
Masaya Komatsu. "Three Dimensional Resist Profile Simulation", SPIE, vol. 1927 Optical/Laser Microlithography VI (pp. 413-426), Feb. 1993.

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