Profile control of boron implant

Details Profile control of boron implant Profile control of boron implant

1985-09-23

1987-01-20

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 29571, 29576B, 29576T, 357 91, H01L 21265, H01L 2126

Patent

active

046378367

ABSTRACT:
The ion implantation of a silicon structure isolated from a semiconductor substrate by a layer of silicon dioxide with boron ions to render it p type conductive is improved by initially doping the silicon with phosphorus ions. The presence of the phosphorus ions in the silicon prevents the implanted boron ions from rapidly migrating into the silicon dioxide during annealing.

REFERENCES:
patent: 3390019 (1968-06-01), Manchester
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4502894 (1985-03-01), Seto et al.
patent: 4507847 (1985-04-01), Sullivan
patent: 4560419 (1985-12-01), Bourassa et al.
patent: 4569123 (1986-02-01), Ishii et al.

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