Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-03-07
2006-03-07
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S773000, C257S775000, C257S780000
Reexamination Certificate
active
07009294
ABSTRACT:
A production process for a semiconductor device having a metal electrode on a semiconductor substrate thereof. A metal electrode portion is formed on a surface of another substrate for electrode transfer. Then, the metal electrode portion is transferred from the electrode transfer substrate onto the semiconductor substrate by pressing together the electrode transfer substrate and the semiconductor substrate. The electrode transfer substrate has, for example, a seed film provided on the surface thereof, and the formation of the metal electrode portion on the electrode transfer substrate may be achieved by depositing a material for the metal electrode on the seed film by plating. The electrode transfer substrate may have an insulating film which covers a surface of the seed film except a portion thereof on which the metal electrode portion is to be formed.
REFERENCES:
patent: 4855251 (1989-08-01), Iyogi et al.
patent: 5310699 (1994-05-01), Chikawa et al.
patent: 5336547 (1994-08-01), Kawakita et al.
patent: 5492863 (1996-02-01), Higgins, III
patent: 5607099 (1997-03-01), Yeh et al.
patent: 5646068 (1997-07-01), Wilson et al.
patent: 5808360 (1998-09-01), Akram
patent: 5984164 (1999-11-01), Wark
patent: 6008071 (1999-12-01), Karasawa et al.
patent: 6057168 (2000-05-01), Seyama et al.
patent: 6117759 (2000-09-01), Greer et al.
patent: 6294909 (2001-09-01), Leedy
patent: 6409073 (2002-06-01), Kaskoun et al.
Hikita Junichi
Shibata Kazutaka
Ueda Shigeyuki
Picardat Kevin M.
Rabin & Berdo P.C.
ROHM Co. Ltd.
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