Production process for a capacitor electrode formed of a platinu

Details Production process for a capacitor electrode formed of a platinu Production process for a capacitor electrode formed of a platinu

1998-03-25

2000-10-24

Wilczewski, Mary

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438387, 438396, 438243, 438244, 438253, H01L 2120, H01L 218242

Patent

active

061366595

ABSTRACT:
A production process for a capacitor electrode formed of a platinum metal includes producing a conductive electrode body on a substrate having a silicon-containing surface for the capacitor electrode. Platinum is deposited over the full surface, the platinum is silicized in a temperature step outside the electrode body and the platinum silicide is removed. The advantage of the invention is the avoidance of an etching process for metallic platinum.

REFERENCES:
patent: 5786259 (1998-07-01), Kang
patent: 5899714 (1999-05-01), Farrenkopf et al.
patent: 5903053 (1999-05-01), Iijima et al.
patent: 6008124 (1999-12-01), Sekiguchi et al.
"Observations on the formation and etching of platinum silicide", Myron J. Rand et al., Appl. Phys. Lett., vol. 24, No. 2, Jan. 15, 1974, pp. 49-51.

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