Production of thin layers of polycrystalline silicon on a liquid

Details Production of thin layers of polycrystalline silicon on a liquid Production of thin layers of polycrystalline silicon on a liquid

1978-11-06

1980-09-30

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136258, 148 15, 148175, 156607, 156609, 156614, 156DIG64, 357 4, 357 59, 423350, 4272551, 4272554, H01L 21205, H01L 21208

Patent

active

042253675

ABSTRACT:
Thin layers of polycrystalline silicon are formed atop a metal substrate, by reducing a gaseous silicon containing compound with metallic zinc, in liquid state, and in the presence of at least one other metal which is also in liquid state, same being either tin, lead, gold, silver, antimony and/or bismuth. The reaction is conducted under conditions such that the zinc compound product of reduction is also in gaseous state.

REFERENCES:
patent: 1241796 (1917-10-01), Weaver
patent: 2773745 (1956-12-01), Butler et al.
patent: 3031275 (1962-04-01), Shockley
patent: 3139361 (1964-06-01), Rasmanis
patent: 3346414 (1967-10-01), Ellis et al.
patent: 3525146 (1970-08-01), Hayashida et al.
patent: 3580732 (1971-05-01), Blakeslee et al.
patent: 3990914 (1978-11-01), Weinstein et al.
patent: 4053326 (1977-10-01), Forrat
patent: 4058418 (1977-11-01), Lindmayer
patent: 4102767 (1978-07-01), Mazelsky et al.
Yoshizawa et al., "Reduction of Silicon Tetrachloride with Aluminum" Chemical Abstracts, vol. 57, 3076i-3077b, (1962).
Zoutendyk, J. A., "Dev. of Low-Cost Silicon . . . Solar Energy . . . " Solar Energy, vol. 20, 1978, pp. 249-257.
Saito et al., "Enhanced Crystallinity of Silicon Films . . . " Applied Physics Letters, vol. 29, No. 9, Nov. 1, 1976, pp. 600-602.
Chang, C. A., "Technique for Making Low Cost Silicon Solar Cell" I.B.M. Tech. Discl. Bull., vol. 20, No. 1, Jun. 1977, p. 389.

Affiliated with

Also associated with

Rating

Production of thin layers of polycrystalline silicon on a liquid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production of thin layers of polycrystalline silicon on a liquid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of thin layers of polycrystalline silicon on a liquid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1167786