Production of silicon carbide

Details Production of silicon carbide Production of silicon carbide

1987-05-15

1989-06-13

Stoll, Robert L.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

G01B 3136

Patent

active

048391506

ABSTRACT:
Silicon carbide is produced by a method which includes dipsersing silica in a residual oil, carbonizing the oil at elevated temperatures, and heating the carbonized dispersion to form silicon carbide. Preferably, the silica is an amorphous type. Preferred residual oils are produced by distilling away crude petroleum components at temperatures up to about 350.degree. C. The silicon carbide product typically contains a mixture of powder and whisker configurations, and has many particles with a dimension less than about 1 micrometer.

REFERENCES:
patent: 3085863 (1963-04-01), Prener
patent: 3175884 (1965-03-01), Kuhn
patent: 3319785 (1967-05-01), Schroll
patent: 3379647 (1968-04-01), Smudski
patent: 3754076 (1973-08-01), Cutler
patent: 4248844 (1981-02-01), Ramsey, Jr. et al.
patent: 4283375 (1981-08-01), Horne, Jr. et al.
patent: 4295890 (1981-10-01), Stroke
patent: 4500504 (1985-02-01), Yamamoto
patent: 4504453 (1985-03-01), Tanaka et al.
patent: 4606902 (1986-08-01), Ritter
patent: 4637924 (1987-01-01), Beatty et al.
patent: 4690811 (1987-09-01), Kida et al.
M. A. Janney, G. C. Wei, C. R. Kennedy, and L. A. Harris, "Carbothermal Synthesis of Silicon Carbide", Report ORNL-6169, Oak Ridge National Laboratory, Oak Ridge, Tennessee, May 1985.
B. K. Parekh and W. M. Goldberger, "Separation of Fine Size Silicon Carbide Whiskers from Coked Rice Hulls", Minerals and Metalurgical Processing, Nov. 1985, pp. 227-230.

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