Production of silicon carbide

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C01B 3136

Patent

active

045363790

ABSTRACT:
A process for the manufacture of silicon carbide crystals and whiskers comprises reacting at a temperature between 1,400.degree. C. and 2,100.degree. C. and in the presence of an inert gas, a material including as essential ingredients carbon, alumina, iron oxide, potassium oxide, and silica in an amount to provide a carbon to silicon ratio of from about 0.84:1 to about 2.17:1.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 3161473 (1964-12-01), Pultz
patent: 3166380 (1965-01-01), Kuhn
patent: 3175884 (1965-03-01), Kuhn
patent: 3232706 (1966-02-01), Kuhn
patent: 3246950 (1966-04-01), Gruber
patent: 3271109 (1966-09-01), Mezey et al.
patent: 3519472 (1970-07-01), Dyne et al.
patent: 3692478 (1972-09-01), Knippenberg et al.
patent: 3920446 (1975-11-01), Irani
patent: 3933984 (1976-01-01), Kimura et al.
patent: 4248844 (1981-02-01), Ramsey et al.
patent: 4284612 (1981-08-01), Horne et al.
June-Gunn Lee et al., Am. Ceram. Soc. Bull. (USA), vol. 54, No. 2, pp. 195-198, (1975).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production of silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production of silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of silicon carbide will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-560487

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.