Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1983-06-02
1985-08-20
Kaplan, G. L.
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
C01B 3136
Patent
active
045363790
ABSTRACT:
A process for the manufacture of silicon carbide crystals and whiskers comprises reacting at a temperature between 1,400.degree. C. and 2,100.degree. C. and in the presence of an inert gas, a material including as essential ingredients carbon, alumina, iron oxide, potassium oxide, and silica in an amount to provide a carbon to silicon ratio of from about 0.84:1 to about 2.17:1.
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Burmeister Kevin L.
Carlson Walter H.
Hanna George C.
Zander Gerald B.
Graphite Sales, Inc.
Kaplan G. L.
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