Production of Si.sub.2-x P.sub.x N.sub.2+x (NH).sub.1-x, where x

Chemistry of inorganic compounds – Phosphorus or compound thereof – Nitrogen containing

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423324, 423413, C01B 2106

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052962113

ABSTRACT:
The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen- and phosphorus-containing compound.

REFERENCES:
patent: 4482689 (1984-11-01), Haluska
Schoeller et al., Inorganic Chemistry 23(21) pp. 3369-3373 1984.
Damrauer et al., J. American Chem. Soc. vol. 110, No. 20, pp. 6601-6606 (Sep. 28, 1988).

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