Production of shaped articles of ultra-pure silicon

Coating processes – Coating by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

423349, 427255, 427314, 427345, C23C 1624

Patent

active

047342978

ABSTRACT:
Shaped articles, e.g., bars, of semiconductor-grade, ultra-pure silicon, are facilely and efficiently produced by thermally decomposing/pyrolyzing a monosilane feedstream on a red-heated silicon support member, whereby high purity silicon is deposited thereon, and then recycling the majority of the by-product reaction admixture into said monosilane feedstream.

REFERENCES:
patent: 3091517 (1963-05-01), Short et al.
patent: 3147141 (1964-09-01), Ishizuka
patent: 3168422 (1965-02-01), Allegretti et al.
patent: 3900597 (1975-08-01), Chruma et al.
patent: 4070444 (1978-01-01), Ingle
patent: 4132763 (1979-01-01), Schmidt et al.
patent: 4147814 (1979-04-01), Yatsurugi et al.
patent: 4150168 (1979-04-01), Yatsurugi et al.
patent: 4173944 (1979-11-01), Koppl et al.
patent: 4179530 (1979-12-01), Koppl et al.
patent: 4207360 (1980-06-01), Padovani
patent: 4311545 (1982-01-01), Bugl et al.
patent: 4341749 (1982-07-01), Iya et al.
patent: 4546009 (1985-10-01), Tiedje et al.
patent: 4597989 (1986-07-01), Wonsowicz et al.
Blocher et al., "Survey of Options in a Balanced System for Production of Silicon by Thermal Decomposition of Trichlorosilane", pp. 140-158, TS 695 157 1979.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production of shaped articles of ultra-pure silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production of shaped articles of ultra-pure silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of shaped articles of ultra-pure silicon will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1088477

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.