Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-01-21
1983-11-15
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29591, 148187, 148188, H01L 21225
Patent
active
044147376
ABSTRACT:
A Schottky barrier diode is manufactured by first forming insulating layer on a semiconductor substrate of a first conductivity type. The insulating layer is then provided with a first opening partly exposing the substrate. Then a continuous semiconductor layer doped with an impurity of a second conductivity type is formed over the insulating layer and on the exposed surface of the substrate. The semiconductor layer is etched in the direction of thickness until those portions which lie on the insulating layer and the exposed surface of the substrate are removed, whereby a portion of the semiconductor layer remains on the side wall of the insulating layer which defines the first opening, and a second opening is formed partly exposing the substrate within the first opening. A guard ring region is then formed in a surface region of the semiconductor substrate by diffusing the impurity from the remaining doped semiconductor layer. Finally, a metal layer is formed on the exposed semiconductor substrate surface within the second opening, thus obtaining a Schottky barrier diode.
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Menjo Atsuhiko
Saitoh Shinji
Ozaki G.
Tokyo Shibaura Denki Kabushiki Kaisha
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