Abrading – Abrading process – Glass or stone abrading
Patent
1998-03-09
1999-11-30
Morgan, Eileen P.
Abrading
Abrading process
Glass or stone abrading
451 44, 451 54, 451 69, 451 70, 125 1302, B28B 100
Patent
active
059932929
ABSTRACT:
A shallow notch 1 as a tentative mark is engraved on a periphery of an ingot at a position corresponding to a predetermined crystal orientation in the step of grinding the periphery of the ingot. After the ingot is sliced to wafers, a mark 2 for indication of a crystal orientation is carved on a sliced wafer at a position determined on the basis of the notch 1 by laser marking. Thereafter, the wafer is chamfered to a round shape, and the notch 1 is removed by the chamfering. Since a part where the mark 2 shall be carved is determined on the basis of the notch 1, the mark 2 is efficiently carved on the wafer without the necessity of subjecting each wafer to an X-ray analyzer.
REFERENCES:
patent: 4084354 (1978-04-01), Grandia et al.
patent: 5227339 (1993-07-01), Kishii
patent: 5405285 (1995-04-01), Hirano et al.
patent: 5439723 (1995-08-01), Miyashita et al.
patent: 5679060 (1997-10-01), Leonard et al.
patent: 5792566 (1998-08-01), Young et al.
patent: 5927263 (1999-07-01), Muramatsu
Asakawa Keiichiro
Oishi Hiroshi
Morgan Eileen P.
Super Silicon Crystal Research Institute Corp.
LandOfFree
Production of notchless wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Production of notchless wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of notchless wafer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1665076