Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-01-31
2006-01-31
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S534000, C257S528000, C257S301000, C257S303000, C257S306000, C257S296000, C257S310000, C438S386000, C438S396000, C438S466000, C438S768000
Reexamination Certificate
active
06992368
ABSTRACT:
Metal-insulator-metal capacitor structures are formed in semiconductor substrates using an anodization procedure on deposited underlying metalization followed by deposition of the second metal and planarization by chemical-mechanical polishing or other procedures. The process is additive in character, as opposed to traditional subtractive etch processes for forming capacitor structures. In addition, the process can be used in damascene applications, and can be used to form a wide variety of capacitive structures while reducing the number of mask layers required for formation.
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Cotte John M.
Petrarca Kevin S.
Stein Kenneth J.
Volant Richard P.
Anderson Jay H.
Erdem Fazli
Flynn Nathan J.
Whitham Curtis & Christofferson, P.C.
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