Production of ion beams by chemically enhanced sputtering of sol

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

31511121, 31323131, 250423R, 20429801, 20429804, C23C 1448, H01J 2702, H05H 100

Patent

active

050897462

ABSTRACT:
A method for producing an ion beam for ion implantation by chemically enhanced bombardment of solids. The method is carried out in a reaction chamber having an anode and cathode and a cathode liner rich in a selected element, namely boron, arsenic, phosphorus or antimony. A non-poisonous feed gas is introduced into the reaction chamber and energy is supplied to the feed gas to generate a plasma in the reaction chamber. The constituents of the plasma react chemically with the selected element in the cathode liner and an electrical potential is established between the anode and the cathode so that ions in the plasma bombard the cathode liner. The chemical reaction and bombardment together generate an ion species in the plasma containing the selected element. A beam of ions containing the selected species is then extracted from the plasma.

REFERENCES:
patent: 3566185 (1971-02-01), Gavin
patent: 3955091 (1976-05-01), Robinson et al.
patent: 4135094 (1979-01-01), Hull
patent: 4344019 (1982-08-01), Gavin et al.
patent: 4496843 (1985-01-01), Kirita et al.
patent: 4529475 (1985-07-01), Okano et al.
patent: 4542321 (1985-09-01), Singh et al.
patent: 4562355 (1985-12-01), Keller et al.
patent: 4563610 (1986-01-01), Takagi et al.
patent: 4574179 (1986-03-01), Masuzawa et al.
patent: 4598231 (1986-07-01), Matsuda et al.
patent: 4611121 (1986-09-01), Miyamura et al.
patent: 4629548 (1986-12-01), Helmer
patent: 4633084 (1986-12-01), Gruen et al.
patent: 4642523 (1987-02-01), Nakanishi et al.
patent: 4649278 (1987-03-01), Chutjian et al.
patent: 4658143 (1987-04-01), Tokiguchi et al.
patent: 4703180 (1987-10-01), Taya
patent: 4714834 (1987-12-01), Shubaly
patent: 4734152 (1988-03-01), Geis et al.
patent: 4774414 (1988-09-01), Umemura et al.
patent: 4774437 (1988-09-01), Helmer et al.
patent: 4780239 (1988-10-01), Snyder et al.
patent: 4792687 (1988-12-01), Mobley
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4847476 (1989-07-01), Sato et al.
patent: 4873445 (1989-10-01), Le Jeune
patent: 4893019 (1990-01-01), Oomori et al.
Sax, "Dangerous Properties of Industrial Materials", Van Nostrand Reinhold Company, p. 1, New York, 6th Ed., 1984.
Bai Gui Bin et al., "The Chemical Synthesis and Sputtering of Working Material in RF Heavy Ion Source," Journal of Natural Science of Beijing Normal University, No. 4 (1982), 29-33.
Bai Gui Bin et al., "The Difference Between Metal Ion Extracted from the R.F. Ion Source by Applyig Plasma Chemistry Action and by Non-Plasma Range Chemistry Range Reaction," Proceedings of the 1987 IEEE Particle Accelerator Conference, Mar. 16-19, Washington, D.C., pp. 354-357.
Ma Ming-Hsiu et al., "An Improved Radio Frequency Heavy Ion Source," Radiation Effects, 1979, vol. 44, pp. 207-212.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production of ion beams by chemically enhanced sputtering of sol does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production of ion beams by chemically enhanced sputtering of sol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of ion beams by chemically enhanced sputtering of sol will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1825907

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.