Production of high-purity silicon ingot

Details Production of high-purity silicon ingot Production of high-purity silicon ingot

1993-10-19

1996-04-23

Lander, Ferris

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

117 7, 117 8, 117 10, C30B 1512, C30B 1320

Patent

active

055100953

ABSTRACT:
A process for producing high-purity silicon for solar cells continuously directly from inexpensive silicon containing a comparatively large amount of impurities. This process comprises melting continuously supplied raw material silicon in a bottomless crucible placed in an induction coil, while blowing a hot plasma gas incorporated with an oxygen-containing substance on the surface of the melt for purification, and continuously discharging the solidified silicon downward from said bottomless crucible, with at least an axial part of said bottomless crucible being divided into a plurality of electrically conductive pieces spaced circumferentially.

REFERENCES:
patent: 4399116 (1983-08-01), Amouroux et al.
patent: 4915723 (1990-04-01), Kaneko et al.
Japanese Abstract 2-30698 Feb. 1990 "Casting Device of Silicon".
Japanese Abstract 1-264920 Oct. 1989 "Silicon Casting Device".

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