Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon
Patent
1995-06-07
1996-08-13
Bueker, Richard
Chemistry of inorganic compounds
Silicon or compound thereof
Elemental silicon
423349, 264 81, 4272481, 118719, 118725, C01B 3302
Patent
active
055453872
ABSTRACT:
Disclosed are a processes and reactors for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications by the deposition of silicon from a gas containing a silane compound. The equipment includes a reactor vessel which encloses a powder catcher having a cooled surface. Also within the vessel is a cylindrical water jacket which defines multiple reaction chambers. The silicon powder generated in this process adheres to the coolest surfaces, which are those of the powder catcher, and is thereby collected. Little of the powder adheres to the walls of the reaction chambers. In some embodiments, a fan can be provided to increase gas circulation.
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Blocher et al., "Survey of Options in a Balanced System for Production of Silicon by Thermal Decomposition of Trichlorosilane," Columbus Laboratories, Columbus, Ohio, pp. 140-158, published before Apr. 1, 1992.
Izawa Junji
Keck David W.
Morihara Hiroshi
Nagai Kenichi
Yatsurugi Yoshifumi
Advanced Silcon Materials, Inc.
Bueker Richard
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