Production of finely divided, low defect, stoichiometric titaniu

Details Production of finely divided, low defect, stoichiometric titaniu Production of finely divided, low defect, stoichiometric titaniu

1975-05-09

1976-09-14

Vertiz, Oscar R.

Chemistry of inorganic compounds

Sulfur or compound thereof

Binary compound

423561, 429218, C01G 2300

Patent

active

039807614

ABSTRACT:
Finely divided, stoichiometric titanium disulfide is prepared by directly reacting metallic titanium with less than stoichiometric amounts of elemental sulfur at a temperature between about 400.degree. and 1,000.degree.C. to form finely divided, nonstoichiometric, titanium-rich titanium disulfide. The titanium-rich titanium disulfide is then annealed at a temperature between about 400.degree. and about 600.degree.C. in an atmosphere having a sulfur partial pressure approximately equal to the sulfur partial pressure of stoichiometric titanium disulfide whereby the sulfur in the atmosphere reacts with the titanium-rich titanium disulfide to form a finely divided, stoichiometric titanium disulfide.

REFERENCES:
patent: 3079229 (1963-02-01), Garrett et al.
patent: 3519492 (1970-07-01), Huml
patent: 3726643 (1973-04-01), Merzhanov
Australian Journal of Chemistry, vol. 11, 1958, pp. 445-484, The sulfites Selenides & Tellurides of Ti Zr Ht & Th Parts I-IV McTaggart et al., pp. 459-470 Furnished (Part II).
Annles de Chimie Series 13 vol. 7, 1962 pp. 57-83 Contribution A'Etude Cristallochimique du Systeme Titane-Soufe, Jeanniw, pp. 57-63 Furnished (Intro & Part I).

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