Production of epitaxial layers by vapor deposition utilizing dyn

Details Production of epitaxial layers by vapor deposition utilizing dyn Production of epitaxial layers by vapor deposition utilizing dyn

1978-11-06

1980-02-26

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29574, 118690, 156605, 156606, 156611, 427 8, H01L 21205, H01L 2166

Patent

active

041904702

ABSTRACT:
Epitaxial layers of single crystals of gallium arsenide and similar compounds are formed by vapor deposition. A carrier gas flow is passed through a liquid halide of a group VB material to obtain a first vapor having a halogen, carrier gas and group VB material. The carrier gas flow is monitored and adjusted to obtain a predetermined mass of halogen and second material in this raw vapor. A final reactor input vapor is obtained with constant concentration and constant flow going into a reactor by monitoring the total volume of carrier gas in the raw vapor as added per unit of time and adjusting the raw vapor by adding a volume of additional carrier gas to a predetermined value to form a final reactor input vapor. The reaction and deposition of the epitaxial layer is then carried out in a reactor. A system is used for obtaining constant flow within the reactor with addition of dopants at desired levels while maintaining a constant dilution to the input flow so as to maintain at a deposition substrate, a predetermined constant flow or concentration of amount of reactants to carrier and diluent gas used.

REFERENCES:
patent: 3173814 (1965-03-01), Law
patent: 3441000 (1969-04-01), Burd et al.
patent: 3617371 (1971-11-01), Burmeister
patent: 3701682 (1972-10-01), Gartman et al.
patent: 3721583 (1973-03-01), Blakeslee
patent: 3904449 (1975-09-01), DiLorenzo et al.
patent: 3924024 (1975-12-01), Naber et al.
patent: 3930908 (1976-01-01), Jolly
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4100310 (1978-07-01), Ura et al.
Fergusson et al., "Transport of GaAs . . . Vapor Phase . . . Reaction", J. Electrochem. Soc., vol. 111, No. 5, May 1964, pp. 585-592.
Ewing et al., "Influence of Vapor Composition . . . Gallium Arsenide . . . ", J. Electrochem. Soc., vol. 111, No. 11, Nov. 1964, pp. 1266-1269.
Burmeister et al., "Large Area Epitaxial Growth . . . Applications", Transactions of Metallurgical Soc. of AIME, vol. 245, Mar. 1969, pp. 587-592.
Stewart, C. E. E., "Stoichiometric Effects . . . Layers of GaAsP", J. Crystal Growth, vol. 8, 1971, pp. 259-268.
DiLorenzo, J. V., "Vapor Growth of Epitaxial GaAs . . . Layers", J. Crystal Growth, vol. 17, 1972, pp. 189-206.
Enstrom et al., "Influence of Gas-Phase . . . GaAs P-N Junctions", J. Electrochem. Soc., vol. 121, No. 11, Nov. 1974, pp. 1516-1523.
Shaw, D. W., "Kinetic Aspects in the Vapor . . . III-V Compounds", J. Crystal Growth, vol. 31, 1975, pp. 130-141.
Nakayama et al., "Submicron GaAs Epitaxial Layers . . . Arsine", J. Electrochem. Soc., vol. 123, No. 8, Aug. 1976, pp. 1227-1231.

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